复合量子点MOSFET结构存储器的电路模拟  

Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots

作　　者：闾锦[1] 施毅[1] 濮林[1] 杨红官[1] 杨铮[1] 郑有炓[1] 

机构地区：[1]南京大学物理系和固体微结构物理国家重点实验室,江苏南京210093

出　　处：《电子学报》2004年第11期1793-1795,共3页Acta Electronica Sinica

基　　金：国家自然科学基金 (No .60 2 360 1 0 ;No .60 2 2 50 1 4 ) ;江苏省自然科学基金重点项目

摘　　要：本文采用准经典近似的MonteCarlo方法对复合量子点MOSFET结构存储器的等效单电子电路进行了模拟 .研究结果表明 ,由于台阶状的复合隧穿势垒的作用 ,存储器的存储时间特性可得到极大提高 .我们进一步研究了N沟道锗 /硅复合量子点MOSFET结构存储器的时间特性 ,得到其存储时间可长达数年 ,同时写擦时间可分别为 μs和ns量级 。The time characteristics of the composite quantum dots based MOSFET memory is simulated with the Monte Carlo method in quasiclassical approximation. It indicates that the retention time could be improved evidently owing to the stepwise compound potential barrier. As an example, the time characteristics of N channel Ge/Si hetero-nanocrystal based MOSFET memory is investigated and the retention time could be as long as several years, at the same time, the writing and erasing time can be in the order of μS and ns, respectively. Hence the conflict between high-speed programming and long retention could be resolved satisfyingly.

关 键 词：复合量子点 单电子存储器 电路模拟 

分 类 号：TN386.1[电子电信—物理电子学]