退火效应对MOCVD生长的ZnO薄膜的影响  

Influence of Annealing on the Properties of ZnO Thin Film

作　　者：朱宝富[1] 黄柏标[1] 秦晓燕[1] 李先林[1] 姚书山[1] 尉吉勇[1] 张琦[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2004年第5期755-757,共3页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.11250005130390)资助项目

摘　　要：我们利用MOCVD设备在α-Al2O3衬底上生长了c轴取向的ZnO薄膜,通过X射线衍射(XRD)、光致发光谱(PL)对ZnO薄膜进行表征,研究了退火对ZnO薄膜光电特性影响。通过退火优化,ZnO薄膜的结晶性得到提高,晶粒尺寸变大,紫外光发射峰的强度相对变强。ZnO thin films were grown on c-plane sapphire using MOCVD apparatus. The properties of ZnO thin films were characterized by using X-ray diffraction (XRD) and photolurninescence (PL) spectra. The influence of annealing on the properties of ZnO thin film was studied. The results show that the crystalline of ZnO thin film has been improved. The grains dimension and the intensity of UV emission pesks become bigger.

关 键 词：退火效应 氧化锌薄膜 光电特性 X射线衍射 光致发光谱 金属有机化学气相沉积 

分 类 号：O614.241[理学—无机化学] O484.1[理学—化学]