掺锗CZSi中与锗有关的红外光谱特性  

Characteristic of FTIR Absorption Spectrum of Ge-doped CZSi

作　　者：张维连[1] 牛新环[1] 吕海涛[1] 张恩怀[1] 孙军生[1] 

机构地区：[1]河北工业大学半导体材料研究所,天津300130

出　　处：《人工晶体学报》2004年第5期792-796,共5页Journal of Synthetic Crystals

基　　金：河北省自然科学基金(No.500016)国家自然科学基金(No.59772037)资助项目

摘　　要：用FTIR法测试了CZ法生长的不同掺Ge浓度单晶的红外吸收光谱,结果发现掺锗浓度≤1％(重量比)低浓度情况下,红外谱图与不掺锗CZSi的红外谱图基本相同。但随着掺入晶体中锗浓度的增加,红外谱图在710cm-1处出现了一个新的吸收峰。锗浓度越高,此峰越明显。该峰可能是由于Ge-C或Si-Ce-C键合体系的产生而引起的红外吸收峰。The different concentration of Ge-doped CZSi single crystal was measured by FTIR. The results indicate that when the concentration of Ge dopant is lower than 1 wt%, the FITR spectrum is nearly the same as that of undoped CZSi, but with the concentration of Ge increasing, the spectrum at the lower wavenumber side becomes complex, and at the wavenumber of 710 cm-1 there appears a new absorption peak which relates with Ge, and with the increase of Ge dopant the peak maybe caused by Ge-C or Si-Ge-C system becomes clearer.

关 键 词：半导体材料 硅锗体单晶 红外光谱特性 FTIR谱图 

分 类 号：O613.72[理学—无机化学] TN305.3[理学—化学]