PTCR欧姆接触电极制备方法现状  

Development Status of Preparing PTCR Ohmic Contact Electrode

作　　者：郝永德[1] 熊炫[1] 钟海波[1] 周东祥[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《仪表技术与传感器》2004年第12期8-10,共3页Instrument Technique and Sensor

摘　　要：从半导瓷和金属电极的欧姆接触理论出发 ,详细的叙述了PTCR欧姆接触电极的各种主要制备方法。通过对这些方法的优缺点的分析 ,指出磁控溅射法由于具有制备工艺简单、无工业污染、电极成本低廉、膜层致密均匀、附着力强等优点 ,将在PTCR欧姆接触电极的制备工艺中占据重要地位 。The ohimc contact theory between semiconductor ceramics and mental electrode was presented.Various methods of preparing PTCR ohmic contact electrode were presented.The merit and drawback of these methods will be highlighted,and their impact on the characteristics of BaTiO_3-ceramic based PTC thermistors will be discussed.Points out the Magnetron Sputtering method has simplified operation procedure and no industrial pollution.Also the sputtering electrode has low costs,densification film and strong adhesive power.Points out the Magnetron Sputtering method will play a more important role in preparing PTCR ohmic contact electrode and will be a promising prospect in the future industrial application.

关 键 词：PTCR 欧姆接触电极 磁控溅射 

分 类 号：TN304.82[电子电信—物理电子学]