MNOS结构辐照感生界面电荷的研究  

AN INVESTIGATION OF RADIATION-INDUCED INTERFACE CHARGES IN MNOS STRUCTURE

作　　者：吴凤美[1] 施毅[1] 赵丽华[2] 祁斌[2] 刘英堃 周荷秀[2] 路金印 

机构地区：[1]南京大学物理系 [2]机电部石家庄13所

出　　处：《南京大学学报（自然科学版）》1993年第3期376-382,共7页Journal of Nanjing University（Natural Science）

摘　　要：本文报导了MNOS结构经γ射线、电子和中子辐照在SiO_2-Si界面产生感生电荷的研究结果。实验表明,目前的MNOS结构在较低剂量时辐照感生电荷就趋于饱和,辐照特征与SiO_2厚度及辐照顺序有关。文中还对实验结果作了进一步讨论。The investigation of radiation-induced interface charges at SiO2-Si interface in MNOS structure exposed to γ-ray, electron and neutron radiations has been made. Experimentally, it is found that saturation of radiation-induced charges occurs at a lower dose in the present MNOS structure, and the characteristics of the radiation-induced charges are related to the thickness of SiO2 and the order of irradiation. A discussion on the experimental results is given.

关 键 词：MNOS结构 辐照 界面电荷 半导体 

分 类 号：O474[理学—半导体物理]