微波-ECR等离子体辅助沉积Zr-N薄膜结构和性能研究  

Structures and Properties of Zr-N Films Prepared by ECR-Microwave Plasma Enhanced Sputtering

作　　者：刘天伟[1,2] 邓新禄[1] 王小英[3] 王英敏[1] 董闯[1] 

机构地区：[1]大连理工大学三束国家重点实验室 [2]中国工程物理研究院四川绵阳621900 [3]中国工程物理研究院

出　　处：《真空科学与技术学报》2004年第5期334-338,342,共6页Chinese Journal of Vacuum Science and Technology

基　　金：中物院联合基金 (No .10 1760 0 5 )

摘　　要：在不同氮流量下 ,利用微波 ECR等离子体溅射沉积技术在 4 5 # 钢基体上制备了ZrN薄膜。XRD、TEM分析结果表明 :随着充入N2 流量的改变 ,薄膜结构由单一的ZrN结构向ZrN和ZrNx 复合结构转变 ,然后出现非晶态结构。当N2 流量在 (2～ 8)sccm之间 ,薄膜为ZrN结构 ;在 (10～ 12 )sccm时 ,为ZrN和正交的ZrNx(a =0 35 85nm ,b =0 4 4 4 3nm ,c =0 5 798nm)混合型结构 ;14sccm时出现非晶化趋势。俄歇电子谱仪 (AES)和探针分析表明 :薄膜中氮含量为 7 73%～ 6 6 96 %。同时对薄膜的硬度进行了测试 ,薄膜硬度在 19 82GPa～ 2 6 32GPa之间 ,随氮值的变化 ,先增加后降低。对硬度最高的 4 # 样品进行了摩擦性能测试 ,磨损率约 4 5× 10 -8mg/min。薄膜这些性能的变化是由于不同氮流量下薄膜结构发生变化造成的。ZrN thin films were prepared on #45 steel by using ECR-microwave plasma enhanced DC magnetron sputtering.An increase in the N 2 flow leads to phase transitions from ZrN to both ZrN and ZrN x and to amorphous state.At N 2 flow =2 sccm～8 sccm,the films contain pure ZrN.At N 2 flow =(10～12) sccm,both ZrN and the orthorhombic ZrN x(a=0.3585 nm,b=0.4443 nm,c=0.5798 nm) are observed.At N 2 flow =14 sccm,the film shows a strong tendency towards amorphous state.The N concentration of the samples varied from 7.73% to 66.96% by Auger electron spectroscope(AES) and electron probe analyses.The surface microhardness ofthe samples,varying from 19.82 GPa to 26.32 GPa,first increases and then decreases with increasing of N 2 flow.The hardest sample,#4,has a wear rate of about is 4.5×10 -5 mg/min.The changes of hardness can be explained by the change of film structure due to different N 2 flow.

关 键 词：薄膜结构 等离子体 俄歇电子谱 溅射沉积 正交 非晶态结构 XRD 薄膜硬度 钢基体 45^#钢 

分 类 号：TB383[一般工业技术—材料科学与工程] O484[理学—固体物理]