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机构地区:[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027
出 处:《浙江大学学报(工学版)》2004年第11期1511-1514,共4页Journal of Zhejiang University:Engineering Science
基 金:国家自然科学基金资助项目(60078001).
摘 要:采用霍尔源离子辅助沉积(IAD)技术制备了ZnS/MgF2多层膜窄带干涉滤光片,并与常规沉积条件下制备的样品作比较.结果发现离子辅助沉积明显减小了滤光片的光谱漂移,实测漂移小于0.5nm,光谱稳定性得到很大提高.计算了滤光片中MgF2膜层的聚集密度,离子辅助沉积使MgF2膜的聚集密度从常规条件下的0.70提高到0.97,增幅达38%.间隔层对光谱漂移的影响最大,越远离间隔层的膜层,其影响越小.ZnS/MgF2 narrow band interference filters were deposited by ion-assisted-deposition (IAD) with an end-hall ion source. Compared to the specimens produced by conventional process deposition, the spectral shift of the filter was reduced obviously using IAD. The typical result showed that the spectral shift was less than 0.5 nm. The formula for estimating the packing density of the films was put forward in terms of the measured spectral shift; and the packing density of MgF2 layers in the filters was calculated. The calculated density of MgF2 with IAD was increased from 0.70 for conventional process to 0.97. The spacer layer has great influence on the spectral shift. The farther the layers are away from the spacer, the less is the effect.
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