低能Ar^+离子束辅助沉积择优取向Pt(111)膜  

Pt thin films on Mo/Si(100) substrate prepared by low energy ion beam assisted deposition

作　　者：江炳尧[1] 蒋军[1] 冯涛[1] 任琮欣[1] 张正选[1] 宋志棠[1] 柳襄怀[1] 郑里平[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心,上海200050 [2]中国科学院上海原子核研究所,上海201800

出　　处：《功能材料》2004年第6期774-775,778,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展规划(973计划)资助项目(G2000067207 2)

摘　　要：　采用低能Ar+离子束辅助沉积方法,在Mo/Si(100)基底上沉积Pt膜,离子/原子到达比分别为0.1、0.2、0.3。若Ar+离子的入射角为0°,XRD谱分析表明,沉积的Pt膜均呈(111)和(200)混合晶向;当Ar+离子的入射角为45°,沉积的Pt膜均呈很强的(111)择优取向。因此若合理控制Ar+离子束的入射角,可在Mo/Si(100)衬底上制备出具有显著择优取向的Pt(111)薄膜。本文采用MonteCarlo方法模拟低能Ar+离子注入Pt单晶所引起的原子级联碰撞过程,得出Ar+离子入射单晶铂(200)晶面时,Ar+离子的溅射率与入射角的关系,对Pt膜择优取向的机理作了初步的探讨和分析。Pt films were deposited on Mo/Si(100) substrate by low energy ion beam assisted deposition (IBAD). The ion/atom arrival ratios were 0.1, 0.2, and 0.3, respectively. Pt films had mixed (111) and (200) orientations deposited with simultaneous 500 eV Ar ion bombardment at incidence angle of O° and had highly preferred (111) orientation at incidence angle of 45°. Therefore, it is a good method to prepare highly oriented Pt(111) films on Mo/Si(100) substrate by off-normal incidence ion bombardment during film growth. The reason for the preferred orientation of Pt films was also discussed. It was considered that the orientation of Pt films did not simply depend on the channeling effects of ions, or the grain surface free energy, but it was the results of mutual competition of surface free energy and channeling effects.

关 键 词：离子束辅助沉积 Pt膜 择优取向 

分 类 号：TG174.444[金属学及工艺—金属表面处理]