AlGaInP/GaInP多量子阱的拉曼光谱  

Raman spectra of AlGaInP/GaInP multiple-quantum wells

作　　者：陈练辉[1] 范广涵[1] 孟耀勇[2] 刘桂强[2] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]华南师范大学激光生命科学研究所,广东广州510631

出　　处：《量子电子学报》2004年第6期859-862,共4页Chinese Journal of Quantum Electronics

基　　金：国家科技攻关计划基金(00-068)

摘　　要：利用LP-MOCVD生长了不同周期的AlGaInP/GaInP MQW样品,并测量了它们的拉曼光谱。由于样品包括了掺杂的电流扩展层和欧姆接触层以及上、下限制层,拉曼光谱中观察到了与掺杂有关的耦合电子(空穴)气-纵光学声子模。根据喇曼光谱的选择定则,结合光致发光谱,发现AlP-LO/TO的相对强度比可以评定晶体AlGaInP MQW的生长质量。AlGalnP/GalnP MQW samples of different numbers of wells were grown by LP-MOCVD and their Raman spectra were measured. Because of the doped current spreading layer, Ohm touching layer, top confining layer and bottom confining layer, coupled elec-tron(hole) -plasmon-LO-phonon modes are observed in Raman spectra. According to the Raman selection rule and the PL measurement, it is reasonable to evaluate the quality of AlGalnP/GalnP MQW by analyzing the relative intensity ratio of A1P-LO/TO.

关 键 词：光电子学 AlGaInP/GaInP MQW 拉曼光谱 耦合电子(空穴)气-纵光学声子模 

分 类 号：O472.3[理学—半导体物理] O433.5[理学—物理]