基片温度对氧化钒薄膜结构与电性能的影响  

Effects of Substrate Temperature on the Structure and Electric Properties of VO_x FilmsWU Miao, HU Ming, WEN Yu-feng

作　　者：吴淼[1] 胡明[1] 温宇峰[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2004年第6期471-473,487,共4页Piezoelectrics & Acoustooptics

基　　金：天津市自然科学基金资助项目(043600811)

摘　　要：以V2O5粉末为原料采用真空蒸发法结合真空退火还原法在玻璃基片上制备VOx薄膜,调节不同的基片温度获得几组薄膜。运用X-射线衍射(XRD)分析和扫描电子显微镜(SEM)分析发现随着基片温度的不同,薄膜成分、物相以及表面形貌有明显差异。在基片温度为200°C时所得薄膜的电阻温度系数(TCR)达到-0.03/°C,并发现基片温度越高,薄膜在室温附近的电阻率越低,电阻温度系数绝对值也越小。VO_x thin films are prepared on glass by means of evaporation of V_2O_5 powder and post annealing in vacuum. Three different thin films will be made by adjusting three different substrate temperature, and the TCR of the sample prepared in 200 (°C) is up to -0.03/(°C). XRD and SEM technique are used to study the films. We find three films have different composition?phase and morphology. The resistivity and TCR of the film prepared in higher substrate temperature is lower.

关 键 词：五氧化二钒 真空蒸发 退火 VOx薄膜 基片温度 电阻温度系数 

分 类 号：O484[理学—固体物理]