硅多条探测器的研制  

Development of Si multi-strip detector

作　　者：谭继廉[1] 靳根明[1] 王宏伟[1] 段利敏[1] 袁小华[1] 王小兵[1] 李松林[1] 卢子伟[1] 徐瑚珊[1] 宁宝俊[2] 田大宇[2] 王玮[2] 张录[2] 

机构地区：[1]中国科学院近代物理研究所,甘肃兰州730000 [2]北京大学微电子研究所,北京100871

出　　处：《核电子学与探测技术》2004年第6期551-554,共4页Nuclear Electronics & Detection Technology

摘　　要：描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果.这种探测器的灵敏面积为50mm×20mm.P掺杂面被等分成相互平行的,长度为20mm,宽度为3mm的16硅条,相邻条之间的间距为140μm.当探测器工作在全耗尽偏压下,每一条的反向漏电流的典型值＜2nA.对239Pu α粒子的能量分辨为0.5%～0.9%,相邻条之间的相互影响(crosstalk)为4%～8%.The technology, test results and preliminary applications of Si multi-strip detector fabricated by using microelectronic technique were described in this paper. The sensitive area of this kind of detector is 50mm×20mm. The P side surface was divided into equal 16 trips with 140μm space between two strips , each one having length of 20mm and width of 3mm. A reverse leakage current of less than 2nA and an energy resolution of 0.4%-0.9%( for 239Pu α particles) and a crosstalk between neighboring strips of 4%-8% have been obtained when the detector was operated in full depletion condition.

关 键 词：反向漏电流 微电子工艺 探测器 掺杂 偏压 宽度 描述 能量分辨 等分 Α粒子 

分 类 号：TL816.2[核科学技术—核技术及应用] O572[理学—粒子物理与原子核物理]