玻璃钝化技术对半导体放电管抗浪涌能力的影响  

Influence of Glass Passivation on the Surge Handling Capability of Semiconductor Arresters

作　　者：李小鹏[1] 唐政维[1] 

机构地区：[1]重庆邮电学院光电工程学院,重庆400065

出　　处：《微电子学》2004年第6期667-669,共3页Microelectronics

摘　　要：　半导体放电管是新一代抗浪涌保护器件,极间电容是其应用到高频环境下的一个限制因素。文章从半导体放电管的基本结构出发,介绍了用玻璃钝化技术去除放电管侧壁电容的方法。理论分析表明,在没有采用玻璃钝化技术时,流过放电管结底部的电流大于流过其侧壁的电流,因此,采用玻璃钝化技术对半导体放电管的抗浪涌能力影响不大。Semiconductor arrester is a new type of surge protection device, which, however, has a large interelectrode capacitance, thus limiting its application in high frequency systems. Based on the structure of the arrester, elimination of its sidewall capacitance by glass passivation is described. It is demonstrated through theoretical analysis that the current passing the bottom of the junction is larger than that passing the sidewall when no glass passivation is used. Therefore, it is concluded that glass passivation has little effect on the surge handling capability of the semiconductor arrester.

关 键 词：半导体放电管 玻璃钝化 抗浪涌能力 

分 类 号：TN335[电子电信—物理电子学]