深亚微米/纳米CMOS器件离子蚀刻新技术  

Several New Ion Etching Technologies of Fabricating Deep Submicron/Nanometer CMOS Devices

作　　者：成立[1] 王振宇[1] 武小红[1] 范木宏[1] 祝俊[1] 赵倩[1] 

机构地区：[1]江苏大学电气信息工程学院,江苏镇江212013

出　　处：《半导体技术》2005年第1期35-40,共6页Semiconductor Technology

基　　金：江苏省高校自然科学研究基金项目(02KJB510005)

摘　　要：综述了制备深亚微米/纳米CMOS器件的离子蚀刻新技术:考夫曼(Kaufman)离子铣蚀刻、氟基气体多晶硅蚀刻、氯基或溴基气体硅深蚀刻、电子回旋共振(ECR)蚀刻系统和电感耦合等离子体蚀刻器(ICPE)等,并对比分析了上述蚀刻技术各自的优缺点及其应用要点。Ion etching technologies for fabricating deep submicron /nanometer CMOS devices, which including Kaufman ion milling etching, the fluorine-based gas polycrystalline silicon etching, the chlorine-based or bromine-based gas silicon deep-etching, the electron cyclotron resonance etching system and the inductively coupled plasma etcher are summarized, also the strong and weak points and the main application points of these new ion etching technologies are analysed and compared in more details.

关 键 词：超大规模集成电路 纳米CMOS器件 离子束蚀刻 考夫曼离子源 电子回旋共振 电感耦合等离子体蚀刻器 

分 类 号：TN305.7[电子电信—物理电子学] TN405.98