10 keV X射线在“加速实验”辐照中的优势  

Advantages of 10 keV X-Rays in Radiation Evaluation

作　　者：郭红霞[1] 陈雨生[1] 周辉[1] 关颖[1] 韩福斌[1] 龚建成[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《微电子学》2002年第4期269-272,共4页Microelectronics

摘　　要：文章利用实验结果分析了 5 4 HC0 4的阈值电压在不同剂量率下随总剂量的变化关系 ,对若干种加速实验方法进行了比较 ,认为 1 0 ke V X射线源可以作为对 MOS器件进行快速的加速实验性能测试的辐照源。从环境安全考虑 ,1 0 ke V X射线源易于屏蔽 ,可以用于硅片级的参数测试 ,且花费远远小于封装后的器件在60 Co源上的性能测试 。Based on experimental results, threshold voltage of 54HC04 device dependent on different dose rates is analyzed in the paper A comparison is made on various methods for acceleration test, and the 10 keV X ray radiation source is considered to be one of the sources for fast accelerating test on MOS devices Considering the environmental safety, the 10 keV X ray source is easy to be shielded, and the cost is much lower than other me thods This method can also be used for parameter testing at the wafer level It is an effective approach for total dose estimation

关 键 词：辐照加固 MOS器件 X射线 加速实验 高温退火 

分 类 号：TN432[电子电信—微电子学与固体电子学]