注氮剂量对SIMON材料性能影响的研究  

Dependence of properties on nitrogen implantation doses for SIMON mater ials

作　　者：张恩霞[1] 孙佳胤[1] 易万兵[1] 陈静[1] 金波[1] 陈猛[1] 张正选[1] 张国强[2] 王曦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所 [2]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2004年第4期437-440,共4页Journal of Functional Materials and Devices

摘　　要：采用氧氮共注的方法制备了氮氧共注隔离SOI(SIMON)圆片,对制备的样品进行了二次离子质谱和透射电镜分析,并对埋层结构与抗辐射性能的机理进行了分析。结果表明,注氮剂量较低时埋层质量较好。机理分析结果表明,圆片的抗辐照性能与埋层质量之间存在很密切的关系,埋层的绝缘性能是影响器件抗辐射效应的关键因素。SIMON(Separated by Implanting Oxygen and Nitrogen)wafers were fabricated with oxygen and nitrogen co -implantation.The s tructure of samples were studied by s econdary ions mass spec -troscopy(SIMS )and by cross -sectional transmissio n electron microscopy(XTEM)analysis.The relationship between radiation hardness properties and the status of buried layers in SIMON wafers were investigated.The results show that the buried layer is better for the wafer with lower nitrogen implanta -tion dose than for that with higher ni trogen implantation dose,and the ra diation hardness properties closely depend on the characteristi c of the buried layer.The results als o approve that the insulating ability of the buried layer of the wafers is one of the key factors affectin g the hardening for SOI devices.

关 键 词：氧氮共注 氮氧共注膈离 SIMON SOI 注入剂量 

分 类 号：TN47[电子电信—微电子学与固体电子学] TN305.3