SnO_2(F)、Fe_2O_3和ZnSe(Fe)薄膜厚度的测量  

THICKNESS MEASUREMENT OF SnO_2,Fe_2O_3 AND ZnSe(Fe)FILMS

作　　者：谭春雨[1] 夏曰源[1] 张汝贞[1] 刘吉田[1] 刘向东[1] 许炳章[1] 李淑英[2] 陈有鹏[2] 张淑芝[3] 

机构地区：[1]山东大学物理系 [2]山东大学光电材料与器件研究所 [3]山东大学光学系

出　　处：《山东大学学报（自然科学版）》1993年第2期189-195,共7页Journal of Shandong University(Natural Science Edition)

基　　金：山东省自然科学基金

摘　　要：用RBS技术、椭偏法和微量天平称重法测量了掺氟SnO_2(FTO)透明导电膜、掺铁ZnSe磁性半导体膜和Fe_2O_3气敏元件膜的薄膜厚度.实验结果表明,RBS技术的测量数值与椭偏法以及微量天平称重法测得的结果符合得较好。The thickness of fluorine-doped SnO_2 (FTO) films, iron-doped ZnSe films and Fe_2O_3films have been investigated by using RBS technique, Ellipsometry and Microbalance methods. It is shown that the results measured by RBS technique are agreement with results obtained by using Ellipsometry as well as Microbalance methods for FTO films and irondoped ZeSe films respectively.

关 键 词：薄膜 厚度 FTO 氧化铁 硒化锌 铁 

分 类 号：O484.5[理学—固体物理]