HWE生长大面积CdTe/CdZnTe/Si薄膜的结构和形貌分析  

The Analysis of Structure and Morphology for Big Area CdTe/CdZnTe/Si Thin Film Grown by HWE Technique

作　　者：杨爱明[1] 吴长树[2] 杨宇[1] 唐利斌[2] 

机构地区：[1]云南大学化学与材料工程学院,云南昆明650091 [2]昆明物理所,云南昆明650223

出　　处：《激光与红外》2004年第6期457-459,共3页Laser & Infrared

基　　金：云南省教育厅重点项目基金 ( 0 2ZD0 16)

摘　　要：用热壁外延法 (HWE)生长直径 30mm的CdTe/CdZnTe/Si薄膜 ,经XRD测试说明它是晶面为 (111)取向的立方闪锌矿结构。SEM对Si衬底、CdZnTe缓冲层和CdTe薄膜三层分别测试 ,结果发现 :Si衬底表面结构粗糙 ,CdZnTe缓冲层较Si衬底表面结构细致 ,CdTe薄膜较CdZnTe缓冲层表面结构光滑细密 ,即缺陷较CdZnTe缓冲层少很多。通过对该片子照像看出其表面如镜面。The CdTe/CdZnTe/Si thin film (Φ30mm) was grown with Hot Wall Epitaxy (HWE) technique.This film was tested structure of the cube blende with x-ray diffractometer (XRD).XRD shows that the thin film is the cube blende with (111) direction.The Si substrate,CZT buffer layer and CdTe thin film were tesed by using scanning electron microscopy (SEM),respectively.Results show that the surface morphology of Si substrate is rather rough ,the surface morphology of CdZnTe buffer layer is more denser than Si substrate.The surface morphology of CdTe thin film is lubriciouser than CdZnTe buffer layer,which has more defects.The defect of CdTe thin film is less than that of CdZnTe buffer layer.The photograph of the CdTe/CdZnTe/Si film looks like mirror,indicating that the big area thin film of CdTe/CdZnTe/Si can be made by using HWE technique.

关 键 词：热壁外延 大面积 硅衬底 碲镉薄膜 结构 表面形貌 

分 类 号：TB381[一般工业技术—材料科学与工程]