高质量HgCdTe薄膜的液相外延生长  

Growth of HgCdTe Films by LPE

作　　者：马庆华[1] 陈建才[2] 姬荣斌[2] 杨宇[1] 

机构地区：[1]云南大学,云南昆明650091 [2]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2005年第1期42-44,共3页Infrared Technology

摘　　要：用固态HgTe作为Hg补偿源,采用开管、水平滑块推舟的富Te液相外廷(LPE)方法在碲锌 镉(Cd1-yZnyTe,y=0.04)衬底上外延生长大面积Hg1-xCdxTe(x=0.2)薄膜材料,通过适当的生长条件 得到组分均匀、结构完整、表面形貌良好的长波碲镉汞薄膜。测试结果表明本方法生长的HgCdTe薄 膜能满足目前研制红外焦平面器件的要求。Hg1-xCdxTe (x=0.2) films have been grown from Te-rich solution in open-tube sliding-boat LPE system on Cd1-xZnxTe (y=0.04) substrates. Solid HgTe was used to compensate for the Hg loss from the solution. Large-size long wavelength MCT films with uniform composition, perfect construction and good morphology were obtained. The measurements show that the epilayer can satisfy the fabrication of Focus Plane Arrays(FPAs).

关 键 词：液相外延生长 红外焦平面器件 碲镉汞 衬底 CDTE薄膜 高质量 长波 固态 表面形貌 薄膜材料 

分 类 号：TN304.25[电子电信—物理电子学] O484[理学—固体物理]