用外吸除技术消除P型<111>硅片雾缺陷的研究——Ⅰ.背面多晶吸除技术  

Investigations on Elimination of the Haze-defects in P<111> Silicon Wafers by Means of Extrinsic Gettering Techniques Ⅰ. Backside Polysilicon Gettering Technique

作　　者：李积和 周子美 陈青松 闵靖[2] 

机构地区：[1]上海第二冶炼厂,上海201600 [2]复旦大学材料研究所

出　　处：《上海金属（有色分册）》1993年第3期29-34,共6页

摘　　要：研究了背面多晶和改进的背面损伤两种外吸除工艺,及其在消除P型<111>硅片雾缺陷中的应用。用TEM、SEM和热氧化等方法分析了背面多晶层和背面损伤层的微观结构和吸除效果。简单叙述了SIMS和MOS c-t少子产生寿命的测试结果以及吸除机理。本文是第一部分,主要内容是背面多晶生长工艺及其在消除P型<111>硅片雾缺陷中的应用。Two kinds of extrinsic gettering techniques, backside polysilicon and improved backside damage, and their applications in elimination of the haze-defects in P<111> silicon wafers have been investigated. The microstructure and gettering efficiency of backside polysilicon layer and backside damaged layer have been comprehensively analysed by means of TEM, SEM and thermal oxidation. The gettering mechanism and results of SIMS as well as the generation lifetime measured by MOS c-t are briefly described. This paper is the first part of the series of this study. It mainly reports the deposit technology of backside polysilicon and its application in elimination of haze-defects.

关 键 词：吸除技术 硅片 雾缺陷 微观结构 

分 类 号：TN304.12[电子电信—物理电子学]