InP/GaAs材料和器件的直接键合  

Direct Wafer Bond of GaAs/InP Materials and Devices

作　　者：谢生[1] 陈松岩[1] 王水菊[2] 何国荣[1] 林爱清[1] 陈朝[1] 

机构地区：[1]厦门大学物理系 [2]厦门大学分析测试中心

出　　处：《半导体光电》2004年第6期426-429,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(60006004).

摘　　要：　采用三步法在GaAs衬底上实现InP材料的键合,通过X 射线光电子谱(XPS)对样品键合界面进行化学价态和深度分布分析。结果表明,键合温度小于450℃时,样品界面主要由三维氢键网络组成;大于450℃时界面处发生互扩散,Ⅴ族元素主要在界面处富集,而Ⅲ族元素具有较深的扩散。因此提出界面层以InGaAs、InGaP为主,这种界面化学态的变化对样品的I V特性和键合强度都具有实质意义的影响,同时由于异质结带阶的存在,要获得良好的电学性质和强度,键合温度并不是越高越好,而是存在一个最佳温度。最后,在GaAs衬底上成功地键合了InGaAs/InP光电探测器。GaAs/InP materials are successfully bonded at 350 ℃ by three-step method. The chemical states and depth profile of bonded InP/GaAs interface are analyzed by using X-ray photoelectron spectroscopy (XPS). The results show that the bonded interface is made from the networks of hydrogen when the annealing temperature below 450 ℃, but the interdiffusion at InGaAs (or/and InGaP) interface is carried out when the temperature above 450 ℃, and the I-V characteristics and bonding strengths depend strongly on the change of chemical states. To obtain excellent I-V characteristics and bonding energy, the annealing temperature should be optimized. Based on our experimental results and the discussions, the mechanism of GaAs/InP direct bonding is proposed. In the end, InGaAs/InP detectors are successfully bonded on the GaAs substrate at 450 ℃.

关 键 词：直接键合 X-射线光电子谱 I-V特性 键合强度 探测器 

分 类 号：TN305[电子电信—物理电子学]