高质量立方氮化硼薄膜的射频磁控溅射制备及其性能表征  

Preparation of High Quality Cubic Boron Nitride Film by Radio Frequency Magnetron Sputtering and Its Characterization

作　　者：蔡志海[1] 杜玉萍[1] 谭俊[1] 张平[1] 赵军军[1] 黄安平[2] 许仕龙[2] 严辉[2] 

机构地区：[1]装甲兵工程学院装备再制造技术国防科技重点实验室,北京100072 [2]北京工业大学,北京100022

出　　处：《材料保护》2005年第1期9-12,共4页Materials Protection

基　　金：国家自然科学基金资助项目 (5 99710 6 5 )

摘　　要：运用射频磁控溅射法在硅片上制备了立方氮化硼薄膜 ,并对射频功率、气体分压比及衬底偏压等参数对膜中立方氮化硼 (c -BN)含量的影响进行了研究。采用傅立叶红外光谱 (FTIR)、拉曼光谱、X射线光电子能谱 (XPS)和原子力显微镜 (AFM )对c -BN薄膜进行了表征和分析。结果表明 :30 0W的射频功率是制备c -BN薄膜的最佳条件 ;当气体分压比Ar/N2 =5 1时 ,制备的薄膜中c -BN含量相对最高 ;立方氮化硼的形成存在偏压阈值 (约 80V ) ,低于此偏压c -BN很难形成。拉曼光谱分析进一步确认了BN薄膜的晶相结构。AFM和XPS分析结果表明c -BN薄膜结晶良好 ,晶粒尺寸细小 ,具有很好的化学配比 ,B原子与N原子的含量比为 1l。Cubic boron nitride (c BN) film was prepared on silicon wafer by radio frequency (RF) magnetron sputtering. The effects of RF frequency, gas partial pressure, and substrate bias voltage on the content of c BN in the film were investigated. The resulting c BN film was characterized by means of Fourier transformation infrared spectroscopy, Raman spectroscopy, X ray photoelectron spectroscopy, and atomic force microscopy. It was found that the optimal RF power for the preparation of the c BN film was 300 W. The c BN film prepared at an Ar/N_2 gas partial pressure ratio of 5∶1 had the highest content of c BN. There existed a threshold bias voltage about 80 V for the formation of the c BN film, and the c BN film was hardly formed at a bias voltage below 80 V. Moreover, the prepared c BN film was of good crystallization and had fine grain size, with the ratio of B atom to N atom to be 1∶1, which indicated that the B and N atoms in the c BN film were well stoichiometrically matched.

关 键 词：立方氮化硼薄膜 射频磁控溅射 拉曼光谱分析 

分 类 号：TG174.4[金属学及工艺—金属表面处理]