新型长波长半导体激光器材料GaInNAs  

A Novel Semiconductor Material GaInNAs for Long-Wavelength Semiconductor Lasers

作　　者：俞波[1] 韩军[1] 李建军[1] 邓军[1] 廉鹏[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院北京市光电子技术实验室,北京100022

出　　处：《半导体技术》2005年第2期21-24,29,共5页Semiconductor Technology

基　　金：科技部863计划项目(2002AA312070)

摘　　要：对新型长波长半导体材料GaInNAs进行了述评。通过材料性质的介绍,表明GaInNAs材料是一种很有前景的长波长半导体材料。同时介绍了目前GaInNAs材料的几种主要制备手段并进行了比较, 指出了目前MOCVD生长GaInNAs材料存在的难点。介绍了目前国际上基于GaInNAs材料的长波长VCSEL 的器件研究情况。A novel semiconductor material GaInNAs for long-wavelength semiconductor lasers is reviewed. The material properties of GalnNAs show that it is a promise material for long-wavelength application. The crystal growth of GalnNAs is introduced and the comparison of different growth methods is given,the difficulty of MOCVD growth GalnNAs is introduced also. The fabrication of long wavelength VCSELs based on GaInNAs are presented.

关 键 词：GAINNAS 氮化物 VCSEL 

分 类 号：TN248.4[电子电信—物理电子学]