Ti_(1-x)Co_xO_2铁磁性半导体薄膜研究  

Study of ferromagnetic semiconductor films:Ti_(1-x)Co_xO_2

作　　者：宋红强[1] 陈延学[1] 任妙娟[1] 季刚[1] 

机构地区：[1]山东大学物理与微电子学院晶体材料国家重点实验室,济南250100

出　　处：《物理学报》2005年第1期369-372,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :5 0 1710 3 6;10 2 3 40 10 );国家重点基础研究发展计划 (批准号:973011CB610 60 3 )资助的课题~~

摘　　要：利用射频磁控反应溅射制备了Ti1 -xCoxO2 薄膜样品 .超导量子干涉仪 (SQUID)测量了样品在常温 ,低温下的磁特性 .结果显示样品在常温下已经具有明显的铁磁性 .常温时其矫顽力 32× 10 3A m ,饱和磁化强度 5 5emu/cm3 磁性元素的磁矩达 0 6 79μB/Co.饱和场 12× 10 4 A m .x射线衍射 (XRD)和x射线光电子能谱 (XPS)实验分析初步表明样品中没有钴颗粒 .Co-doped TiO2 ferromagnetic semiconductor flms were prepared by rf co-sputtering method and then annealed in vacuum at 300degreesC for 2 h. Superconducting quantum interference device (SQUlD) measurements indicate that the samples are ferromagnetic and the Curie temperature is above 300K. The saturation magnetization, coercivity, and saturation field are 55emu/cm(3), 400 x 80A/m and 1500 x 80A/m at room temperature, respectively. And the magnetic moment was observed to be 0.679mu(B)/Co. No pure Co metal grains were found by x-ray diffraction and x-ray photoemission spectroscopy measurements.

关 键 词：铁磁性 磁矩 x射线光电子能谱(XPS) 磁控反应溅射 磁特性 饱和磁化强度 半导体薄膜 矫顽力 SQUID 测量 

分 类 号：O471[理学—半导体物理]