氨化硅基Ga_2O_3/Al_2O_3制备GaN薄膜的发光特性研究  

Photoluminescence Study of GaN Film Grown by Ammoniating Ga_2O_3/Al_2O_3 Deposited on Si(111) Substrate

作　　者：魏芹芹[1] 薛成山[1] 孙振翠[1] 曹文田[1] 庄惠照[1] 董志华[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《稀有金属材料与工程》2005年第1期166-168,共3页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划(90201025);国家自然科学基金(60071006)资助项目

摘　　要：研究了Ga2O3/Al2O3膜氨化反应自集结制备GaN薄膜的光致发光特性,讨论了发光机制以及生长条件对其光致发光特性的影响。样品的荧光光谱在347nm有一强发光峰,在412nm有一弱发光峰,这两个峰的强度都随着氨化温度的升高和氨化时间的增长而增强,但峰的位置保持不变。我们认为347nm的峰是GaN的带边发光峰由于薄膜中晶粒尺寸的减小而蓝移造成的,而412nm的发光峰则来源于导带到杂质受主能级的辐射复合。Photoluminescence(PL) of Gallium nitride (GaN) films grown by ammoniating Ga2O3/Al2O3 films deposited on silicon (111) by rf magnetron sputtering has been studied. The mechanism and the influence of growth condition on the photoluminescence is also studied. There are two emission peaks: a strong one at 347 nm, and a weak one at 412 nm. Increasing the ammoniating temperature and lengthening the ammoniating time, the intensities of both two peaks increase, but the in locations do not move. The peak at 347 nm is considered to be the blue-shift, which was caused by micro- size of GaN grains, of the band-edge emission peak of GaN. The emission peak at 412 nm is attributed to radiant combination from conduct band to the energy level of acceptor impurity.

关 键 词：GAN薄膜 荧光光谱 带边发射 辐射复合 

分 类 号：TN304[电子电信—物理电子学]