低真空退火对GaN MSM紫外探测器伏安特性的影响  

Low vacuum annealing impact on current-voltage characterization of GaN MSM UV detectors

作　　者：亢勇[1] 李雪[1] 肖继荣[1] 靳秀芳[1] 李向阳[1] 龚海梅[1] 方家熊[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《红外与激光工程》2005年第1期15-18,共4页Infrared and Laser Engineering

摘　　要：利用金属有机化学气相沉积生长的非故意掺杂GaN单晶制备了金属-半导体-金属交叉指型肖特基紫外探测器。用肖特基势垒的热电子发射理论研究了低真空下不同热退火条件对器件伏安特性的影响。Au-GaN肖特基势垒由退火前的0.36eV升高到400℃0.5h的0.57eV,退火延长为1h势垒反而开始下降。分析结果表明:由工艺造成的填隙Au原子引入的缺陷是器件势垒偏低的主要原因,Au填充N空位形成了施主型杂质是退火后势垒升高的主要原因。Metal-semiconductor-metal interdigital Schottky UV detectors are fabricated on unintentionally doped GaN single crystal grown by metalorganic chemical vapor deposition technique. The impact of low vacuum thermal annealing on the current-voltage characterization of devices has been studied based on thermionic emission theory. The barrier height of Au-GaN Schottky barrier changed from 0.36 eV(before annealing) to 0.57 eV (400 °C 0.5 h), but it reduced after the annealing time extended to an hour. Analysis results show that the defects caused by sputtering interstitial Au atoms make the barrier low. And the increasing of barrier is caused by N vacancies filled with Au atoms which act as donors after annealing.

关 键 词：GAN 金属-半导体-金属 伏安特性 退火 肖特基势垒 

分 类 号：TN364[电子电信—物理电子学]