硅片直接键合界面的存在对器件性能的影响  

Effects of The Silicon Wafer Direct Bonding Interface on Device Performances

作　　者：詹娟[1] 孙国樑 刘光廷[1] 

机构地区：[1]东南大学电子工程系,江苏南京210018

出　　处：《微电子学》1993年第6期43-46,共4页Microelectronics

基　　金：国家自然科学基金资助项目

摘　　要：利用电子透射显微镜(TEM)和俄歇分析仪(AES)观察硅片直接键合界面结构,在界面存在一个小于2nm厚的非晶区-硅氧化物。此界面具有良好的吸杂效应,在同一退火温度下,退火时间愈长,吸杂现象愈明显。因此键合界面的存在改善了晶体管的性能。A non-crysyal region of silicon oxide less than 2nm can be observed on the silicon wafer direct bonding interface by transmission electron microscope (TEM)and Auger spec-troscopy (AES). This interface exhibits excellent effect of gettering, which becomes more significant with longer annealing time at the same annealing temperature. It is conclude that the performance of transistors fabricated on silicon direct bonding wafers can be improved due to the presence of the bonding interface.

关 键 词：硅直接键合 界面 半导体器件 性能 

分 类 号：TN305[电子电信—物理电子学]