硅基Bi_4Ti_3O_(12)薄膜的C-V特性研究(英文)  

C-V Characteristics of Bi_4Ti_3O_(12) Thin Films Deposited on p-Si Substrate

作　　者：付承菊[1] 郭冬云[1] 黄志雄[1] 

机构地区：[1]武汉理工大学材料科学与工程学院,湖北武汉430070

出　　处：《材料科学与工程学报》2005年第1期74-76,共3页Journal of Materials Science and Engineering

基　　金：ThisworkissupportedbytheNationalNaturalScienceFundationofChina (NO .60 1 71 0 1 2 ) .

摘　　要：Bi4 Ti3O1 2 是典型的层状钙钛矿结构铁电材料 ,具有优良的压电、铁电、热释电和电光等性能 ,可广泛应用于铁电存储器、压电和电光等器件。本文在硅衬底上利用溶胶凝胶法制备出Bi4 Ti3O1 2 铁电薄膜 ,并且对其性能进行了研究。测量不同退火温度下得到的Ag BTO p Si结构的C V曲线 ,结果表明Bi4 Ti3O1 2 薄膜在合适的制备工艺下可望实现极化型存储。Bismuth Titanate (Bi_4Ti_3O_ 12) thin films were fabricated on p-Si substrates by Sol-Gel method. The effect of annealing temperature on physical structure and ferroelectric properties of Bi_4Ti_3O_ 12 thin films has been investigated. The X-ray diffraction (XRD) results show that the single perovskite phase of Bi_4Ti_3O_ 12 can be obtained at 600°C. This metal-ferroelectric-semiconductor structure showed a capacitor-voltage (C-V) hysteresis due to ferroelectric polarization.

关 键 词：BI4TI3O12 铁电薄膜 SOL-GEL法 C-V特性 

分 类 号：TN304[电子电信—物理电子学]