低压化学气相沉积法制备ZnSe多晶及其性能研究  

Fabrication of Polycrystalline ZnSe by Chemical Vapor Deposition and Its Properties

作　　者：周育先 方珍意[2] 潘伟[2] 杨曜源 张力强 王向阳 肖红涛 

机构地区：[1]中非人工晶体研究院,北京100018 [2]清华大学,北京100084

出　　处：《稀有金属材料与工程》2005年第2期306-308,共3页Rare Metal Materials and Engineering

摘　　要：以单质 Zn,Se 和 H2为原料,采用低压化学气相沉积方法在温度为 630℃～750℃,压力为 300 Pa～1 000 Pa条件下制备出了性能优异的 ZnSe 多晶材料。性能测试表明,制备出的 CVD ZnSe 多晶材料在 0.55 μm^22 μm, 及 8 μm^14 μm 波段的平均透过率超过 70% (1 mm 厚),在 3.39 μm 处的应力双折射为 54 nm/cm。其光学透过性能与美国采用Zn 和 H2Se 气体为原料制备出的 CVD ZnSe 多晶非常接近。High-quality polycrystalline ZnSe fabricated by CVD method and its optical transmission are reported. A technique directly using Zn Se and H-2 as raw materials is adopted. The deposition temperature within the range of 630degreesC -750degreesC and pressure of 300 Pasimilar to1 000 Pa are selected. The transmission wavelength range of as-fabricated CVD ZnSe is measured to be 0.55 mum similar to22 mum, and the average transmittance in the wavelength range of 8 mumsimilar to14 mum is in excess of 70% (1mm in thickness). The stress birefringence at 3.39 mum is 54 nm/cm. It shows that the optical transmission properties of as-fabricated CVD ZnSe are as good as those of CVD ZnSe fabricated using Zn and H2Se as raw materials.

关 键 词：ZNSE 红外 化学气相沉积 CVD 透过 

分 类 号：TB383[一般工业技术—材料科学与工程]