氨化Si基Ga_2O_3/Al_2O_3制备GaN薄膜  

Formation of GaN Film by Ammoniating Ga_2O_3/Al_2O_3 Deposited on Si(111) Substrate

作　　者：魏芹芹[1] 薛成山[1] 孙振翠[1] 曹文田[1] 庄惠照[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2005年第2期312-315,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划资助(90201025);国家自然科学基金资助(60071006)

摘　　要：研究了 Ga_2O_3/Al_2O_3 膜反应自组装制备 GaN 薄膜。首先利用磁控溅射法在硅衬底上制备 Ga_2O_3/Al2O3膜,再将Ga_2O_3/Al_2O_3 膜在高纯氨气气氛中氨化反应得到了 GaN 薄膜。用 X 射线衍射(XRD),X 光光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)和 荧光光谱(PL)对样品进行结构、组分、形貌和发光特性的分析。测试结果表明:用此方法得到了六方纤锌矿结构的 GaN 晶体膜。Gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga2O3/Al2O3 films deposited by rf magnetron sputtering. The formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and photo luminescence spectrum(PL). The results indicate that the films formed are polycrystalline GaN with hexagonal wurtzite structure.

关 键 词：GAN Ga2O3/Al2O3膜 氮化 磁控溅射 

分 类 号：TN304[电子电信—物理电子学]