光化学气相淀积氮化硅的工艺及其应用研究——(Ⅲ)光CVD氮化硅薄膜应用于提高器件可靠性  

Photo-CVD of Silicon Nitride and Its Application-(Ⅲ)The Thin Film of Photo-CVD Silicon Nitride to Raise the Reliability of Devices

作　　者：汪师俊[1] 蔡琪玉[1] 沈天慧[1] 

机构地区：[1]上海交通大学高纯硅及硅烷国家重点实验室,上海市200030

出　　处：《微电子学与计算机》1993年第9期1-3,共3页Microelectronics & Computer

摘　　要：采用光化学气相淀积(光CVD)氮化硅薄膜进行器件的表面钝化,使整个器件提高了可靠性.The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.

关 键 词：光化学 气相淀积 可靠性 氮化硅 

分 类 号：TN305[电子电信—物理电子学]