辅助沉积线状(3×20cm)离子源设计  

DESIGN OF 3 X20cm RECTANGULAR-BEAM ION SOURCE FOR ASSISTED DEPOSITION

作　　者：尤大纬[1] 李安杰[1] 黄小刚[1] 

机构地区：[1]中国科学院空间科学与应用研究中心,北京100080

出　　处：《微细加工技术》1993年第3期39-42,共4页Microfabrication Technology

摘　　要：线状离子源适合于大面积材料的连续溅射改性过程。多极场设计技术在3×20cm线状离子源的放电室中有很好的应用。A rectangular-beam ion source that is particularly suited for the cotinuous sputter processing of materials over a wide area. Multipole design tecniques that are basically flexible as to dicharge chamber shape were nsed to design an ion source with a 3 × 20cm beam area.

关 键 词：线状离子源 多极场设计 溅射 镀膜 

分 类 号：TN305.92[电子电信—物理电子学]