SiGe材料及其在双极型器件中的应用  

Recent Progress in SiGe Materials and Relevant Bipolar Devices

作　　者：陈震[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《电子与封装》2005年第1期31-35,共5页Electronics & Packaging

摘　　要：SiGe材料具有很多独特的性质,高性能的应变SiGe外延层能够将能带工程的概念引入到传统的S基材料中去。外延SiGe合金使得在Si基材料上制作性能优异的双极晶体管成为可能。本文回顾了siGe材料和SiGe异质结双极晶体管的最新研究进展,包括它们的结构、性能、制作工艺、优点以及未来发展方向等。SiGe material has many unique characteristics.The high performance strained epitaxial layer can introduce the concept of bandgap engineering into the conventional silicon based materials. Epitaxial SiGe alloys offer considerable potential for realizing viable bipolar transistors in the Si material system.This paper reviewed the recent progress in SiGe materials and SiGe heterojunction bipolar transistors (HBTs),including their structures,characteristics,fabrication technologies,advantages and future directions.

关 键 词：SIGE 异质结双极晶体管 微波器件 

分 类 号：TN304[电子电信—物理电子学]