磁控溅射MO薄膜电阻率的原位研究  

AN IN-SITU STUDY OF ELECTRICAL RESISTIVITY OF MAGNETRON SPUTTERING Mo FILM

作　　者：季航[1] 赵特秀[1] 王晓平[1] 董翊 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《物理学报》1993年第8期1340-1345,共6页Acta Physica Sinica

摘　　要：研究了磁控溅射Mo薄膜的电阻率与薄膜厚度的关系。对Mo薄膜的电阻率进行了原位测量,得到电阻率与薄膜厚度的实验曲线。经拟合计算得到Mo薄膜电阻率与薄膜厚度关系的理论曲线。将实验曲线与理论曲线比较,结果显示在薄膜厚度较大时,电阻率与薄膜厚度的关系与Fuchs-Sondheimer(F-S)理论基本符合,如果计入晶粒尺寸对电阻率的贡献则完全符合F-S理论。并得到Mo薄膜尚未形成连续性薄膜前的导电机制为热电子发射机制的结论。In this paper, we report the in-situ study of the dependence of electrical resistivity of magnetron sputtering Mo film on the thickness. We measured the electrical resistivity of Mo film by vacuum measurement. After theoretical computer fitting, we obtained the t heoretical curve of the dependence of resistivity of Mo film on the thickness. We compared the theoretical curve with the experimental curve, the results show that when the thickness is large, there is a very small diversity between the theory of Fuchs-Sordbeimer of resistivity and the present thickness dependence of electrical resistivity. If the effect of grain boundary is considered, the result will agree with the Fuchs-Sordbeimer theory very well in small thickness. We also found that the process of conductance is the thermal electron emission, when the film is not a successive film.

关 键 词：钼 薄膜 电阻率 磁控溅射 原位 

分 类 号：O484.42[理学—固体物理]