采用喇曼散射和光热偏转谱法研究微晶硅薄膜结构  

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

作　　者：张晓丹[1] 赵颖[1] 朱锋[1] 魏长春[1] 麦耀华[1] 高艳涛[1] 孙建[1] 侯国付[1] 耿新华[1] 熊绍珍[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津市光电子薄膜器件与技术重点实验室

出　　处：《光电子．激光》2005年第2期167-170,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"重大基础研究资助项目(G2000028202;G2000028203);教育部资助项目(02167);国际合作资助项目(2002DFG00051);国家"863"计划重大资助项目(2002303261)

摘　　要：采用VHF PECVD技术制备了不同结构的Si薄膜,用喇曼(Raman)散射光谱和光热偏转谱(PDS)分别对材料的结构进行了研究。结果表明:Si薄膜的结构随温度的升高、功率的增大及H稀释的加大逐渐由非晶转变为微晶,同喇曼谱相比,PDS也可粗略地估计材料的结构变化;即使是同一种材料,恒定光电导谱(CPM)和PDS的测试结果是不同的,PDS能更准确地反映材料的实际信息。综合PDS和喇曼谱的测试结果认为,制备出了高质量的微晶Si(μc Si)薄膜。Silicon thin films with different structures fabricated by VHF-PECVD by using Raman scattering were studied and photo thermal deflection spectra (PDS). The results show that structure of silicon thin films change from amorphous to microcrystalline with the increase of substrate temperature, discharge power and hydrogen dilution. Compared with Raman spectra PDS also could be used to estimate the variation of materials structure. The results of PDS and CPM were different even for the same material. PDS usually reflect information of materials more accurately. All results indicate that microcrystalline silicon (μc-Si) thin film characterize low defect densities can be fabricated.

关 键 词：喇曼散射 PDS 微晶硅薄膜 VHF-PECVD 光电导 偏转 高质量 光热 升高 CPM 

分 类 号：TN304[电子电信—物理电子学]