阶梯分布埋氧层固定电荷SOI高压器件新结构和耐压模型  

Breakdown Model and New Structure of SOI High Voltage Devices with Step Buried Oxide Fixed Charges

作　　者：郭宇锋[1] 李肇基[1] 张波 方健[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2004年第12期1695-1700,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 2 760 40 )~~

摘　　要：提出了具有阶梯分布埋氧层固定电荷 (SBOC) SOI新型高压器件 ,并借助求解多区二维泊松方程建立其击穿电压模型 ,对阶梯数 n从 0到∞时的器件击穿特性进行了研究 .结果表明 ,该结构突破常规 SOI结构纵向耐压极限 ,使埋氧层电场从常规 75 V/μm提高到 5 0 0 V/μm以上 ;同时得到均匀的表面电场分布 ,缓解了器件尺寸和击穿电压之间的矛盾 ,因此 SBOC结构是一种改善 SOI耐压的良好结构 .A novel SOI high voltage device with step buried oxide fixed charges(SBOC) is proposed and the breakdown model based on the 2-D Poisson equation is developed.Analytical results are shown in good agreement with the numerical analysis obtained by 2-D semiconductor devices simulator MEDICI.Based on the model,the profiles of 2-D electric field and breakdown characteristics are researched for the different distribution of the fixed charges.The novel structure,as an ideal SOI high voltage device,not only breaks through the limitation of vertical breakdown voltage of the conventional SOI structure and increases the electric field of buried oxide from 75V/μm to 530V/μm,but also obtains better tradeoff between the size of device and breakdown voltage due to the optimization of the surface electric field.

关 键 词：SOI 埋氧层固定电荷 击穿电压 模型 

分 类 号：TN386[电子电信—物理电子学]