Fabrication of SiGe/Si Multi-Quantum Wells Resonant-Cavity-Enhanced Detector  

SiGe共振腔增强型探测器的制备(英文)

作　　者：李传波[1] 毛荣伟[1] 左玉华[1] 成步文[1] 时文华[1] 赵雷[1] 罗丽萍[1] 余金中[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2004年第12期1576-1579,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:G2000036603);国家高技术研究发展计划(批准号:2002AA312010);国家自然科学基金(批准号:90104003,60336010)资助项目~~

摘　　要：A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO 2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.利用 SOI材料的埋层二氧化硅的自停止特性 ,成功制作了具有高反射底镜的共振腔增强型 Si Ge探测器 .底镜沉积于 EPW腐蚀液腐蚀形成的背孔内 ,在 1.2～ 1.5 μm范围内 ,反射率高达 99% .探测器的共振峰在 1.344 μm,光响应为 1.2 m A/ W.与普通结构的探测器相比 ,文中所报道的探测器光响应有 8倍的增强 .

关 键 词：RCE DETECTOR SOI SIGE 

分 类 号：TN215[电子电信—物理电子学]