硅基底上外延生长过渡金属硅化物薄膜的研究  

Study of transition metal silicides thin film epitaxial growth on silicon substrate

作　　者：王金良[1] 

机构地区：[1]北京航空航天大学理学院,北京100083

出　　处：《北京航空航天大学学报》2005年第1期1-4,共4页Journal of Beijing University of Aeronautics and Astronautics

摘　　要：过渡金属与硅的接触系统一直被人们所关注 ,是因为它们在界面处具有肖特基势垒的形成、过渡金属硅化物的外延生长、制作器件的稳定和耐高温等重要性 .因此在硅基底上形成金属硅化物薄膜也被广泛应用于半导体工业 .对硅衬底上蒸发的Cr、Fe、Mn薄膜进行热处理 ,通过固相反应法 (SPR)制备过渡金属硅化物薄膜 ,即经过对过渡金属硅化物 (薄膜 ) Si系统进行各种温度、不同时间的热处理 ,制备出各种过渡金属硅化物薄膜 .对于制成的各种硅化物薄膜 ,用X射线衍射法 (XRD)和软X射线发射分光光谱法 (SXES)对它们的组成成分进行了分析和确认 .并且 ,由这两种分析方法表明Transition metal (TM)-silicon contact systems have received special interest because of their importance in Schottky barrier formation, epitaxial growth, device reliability, refractoriness, etc. The formation of silicides from the reaction between deposited thin metal films and Si substrates has wide application in the semiconductor industry. Transition metal silicides were grown by solid phase reaction (SPR) for thin Cr, Mn, Fe films on n-Si (100) substrate systems. The formation of silicides from the reaction between deposited thin metal films and Si substrates at thermally annealling. They were identified by either X-ray diffraction (XRD) or soft X-ray emission spectroscopy (SXES). From these results it can be concluded that those silicides's thin films grow with single phase on the silicon substrate.

关 键 词：固相反应 硅化物 薄膜生长 X射线衍射 软X射线发射光谱 

分 类 号：O484.1[理学—固体物理] O484.5[理学—物理]