纳米结构TiN薄膜的制备与性能研究  

Investigation on the Nano-structure TiN Thin Film Prepared by Filtered Cathodic Arc Plasma

作　　者：闫鹏勋[1] 吴志国[1] 徐建伟[1] 张玉娟 李鑫[1] 张伟伟[1] 

机构地区：[1]兰州大学等离子体与金属材料研究所,兰州730000

出　　处：《人工晶体学报》2004年第6期974-977,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助 (No .1 0 0 740 2 2 )

摘　　要：利用自行研制的磁过滤等离子体设备 ,在室温条件下的不锈钢基底上成功地制备了性能良好的纳米结构TiN薄膜。运用原子力显微镜和X射线衍射仪对其结构和形貌进行了表征。利用纳米硬度仪测量了TiN薄膜的硬度和弹性模量。结果显示 :沉积的TiN薄膜表面非常平整光滑 ,致密而无缺陷 ;硬度远高于粗晶TiN的硬度 ;TiN晶粒尺寸在 3 0～ 5 0nm ;By using filtered cathodic arc plasma (FCAP) system developed in our laboratory, nano-structure TiN thin film with excellent properties was successfully deposited on stainless steel substrate at room temperature. AFM and XRD were employed to characterize the structure and morphology of the TiN thin film. The hardness and elastic modulus of the film were measured using nano-indenter. The results show that the TiN thin film deposited by FCAP is very smooth, dense and no defects, its hardness is much higher than that of large grain TiN, and the grain sizes of the TiN range from 30 to 50 nm. The structure and properties of the TiN thin film could be influenced by applied substrate bias voltage.

关 键 词：TIN薄膜 不锈钢基底 结构和性能 纳米结构 室温条件 等离子体 表征 制备 性能研究 自行研制 

分 类 号：O484[理学—固体物理]