TiN/SiC纳米多层膜中的晶体互促生长  

The Interpromotion Effect of Crystal Growth in TiN/SiC Nanomultilayers

作　　者：孔明[1] 劳技军[1] 张慧娟[2] 戴嘉维[2] 李戈扬[1] 

机构地区：[1]上海交通大学金属基复合材料国家重点实验室,上海200030 [2]上海交通大学教育部高温材料及高温测试重点实验室,上海200030

出　　处：《上海交通大学学报》2005年第2期324-328,共5页Journal of Shanghai Jiaotong University

基　　金：上海纳米专项基金项目(0352nm084)

摘　　要：研究了TiN/SiC纳米多层膜中的晶体互促生长效应,采用磁控溅射法制备了一系列不同厚度SiC和TiN的TiN/SiC纳米多层膜以及TiN、SiC单层膜.利用透射电子显微镜、X射线衍射仪、扫描电子显微镜和X射线能量色散谱仪分析了多层膜的微结构.结果表明,尽管TiN和SiC的单层膜分别以纳米晶态和非晶态存在,但由TiN和SiC通过交替沉积形成的纳米多层膜却能够生长成为晶体完整性良好的柱状晶并呈现强烈的择优取向,显示了一种异质材料晶体生长的相互促进作用.纳米多层膜中的晶体互促生长效应与新沉积层原子在先沉积层表面上的移动性有重要关系.An interpromotion effect of crystal growth in different materials was studied. A series of TiN/SiC multilayers with different thickness of SiC, TiN layers and SiC, TiN single layers were prepared by the magnetron sputtering method. The microstructure of multilayers was characterized by high-resolution transmission electron microscopy, X-ray diffraction, scanning electron microscope and energy dispersive spectrometer. The results show that though TiN and SiC monolayers exist as nanocrystal and amorphous respectively, the nanomultilayers grown by alternative depositing of TiN and SiC form columnar crystal with intensive preferred orientation. The mobility of atom on the surface of deposited layer seems to be an important factor for the interpromotion effect of crystal growth in nanomultilayers.

关 键 词：TiN/SiC纳米多层膜 晶体生长 共格界面 立方碳化硅 

分 类 号：O484[理学—固体物理]