同时形成用于浅结器件的TiN_xO_y/TiSi_2的热稳定性  

THERMAL STABILITY OF SIMULTANEOUSLY FORMED TiN_xO_y/TiSi_2 FOR SHALLOW JUNCTION DEVICE APPLICATIONS

作　　者：陈存礼[1] 宋海智[1] 华文玉[2] 

机构地区：[1]南京大学 [2]华东工学院

出　　处：《应用科学学报》1993年第3期253-257,共5页Journal of Applied Sciences

基　　金：高纯硅及硅烷国家实验室基金资助项目

摘　　要：用900℃15秒快速热退火使硅上钛膜在高纯NH_3中同时形成TiN_xO_y/TiSi_2双层结构.研究了TiN_xO_y作为Al的扩散势垒的有效性.结果表明,Al/TiN_xO_y/TiSi_2/Si接触系统直至550℃在N_2中烧结30分钟仍然具有良好的热稳定性.A TiNxOy/TiSi2 bilayer structure is formed simultaneously for Ti film on Si by rapid thermal annealing at 900℃ for 15s in highly pure NH3. The effectiveness of TiNxOy as a diffusion barrier layer for Al has been studied. Eesults show that the Al/TiNxOy/TiSi2/Si contact system has good thermal stability, when Bintered in N2, up to 550℃ for 30min.

关 键 词：钛硅化物 扩散势垒 热稳定性 

分 类 号：TN304.24[电子电信—物理电子学]