Si_3N_4膜绝缘与击穿特性的研究  

ELECTRICAL INSULATION AND BREAKDOWN PROPERTIES OF Si_3N_4 THIN FILM

作　　者：吴冲若[1] 樊玉薇[1] 

机构地区：[1]东南大学电子工程系,南京210018

出　　处：《真空科学与技术》1993年第6期375-381,共7页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：论述以SiH_4+Ar+N_2为源气体的PECVD氮化硅膜层绝缘与击穿特性。通过改变沉积温度、反应气体比、沉淀时间等因素,系统研究了这些沉积工艺参数对Si_3N_4膜绝缘耐压性能的影响。在一定的沉积条件下,得到了耐压性能可与LPCVD工艺所沉漠层相比拟的优质Si_3N_4介质膜。在用AES对膜层微观成份分析的基础上,对Si)3N_4膜的三步沉膜机理进行了一些有益探讨。Silicon nitride thin films have been prepared from SiH_4, N_2 and Ar by means of plasma—enhanced chemical vapor deposition (PECVD). It can be used as an insulating layer in static electrical micromotor. Influence of the processing parameters, such as substrate temperature, reactant gas ratio and deposition time, on the electrical resistivity and breakdown properties of Si_3N_4 thin films are studied. Film compositions are examined by Auger energy spectrum. The experimental results are explained based on three-step deposition mechanism of PECVD. The optimum processing parameters to obtain high qualities and good electrical properties of Si_3N_4 thin films are concluded.

关 键 词：氮化硅膜 电击穿 薄膜 绝缘 电性质 

分 类 号：O484.42[理学—固体物理]