单片集成式反应离子刻蚀沟槽耦合腔AlGaAs/GaAs激光器  

Monolithic reactive ion etched groove-coupled-cavity AlGaAs/GaAs laser

作　　者：张石桥 谭叔明[2] 庄婉如[3] 杨培生 陈季英 

机构地区：[1]太原工业大学激光所,太原030024 [2]北方交通大学物理系,北京100083 [3]中国科学院半导体所集成光电子学重点实验室,北京100083

出　　处：《中国激光》1993年第3期161-165,共5页Chinese Journal of Lasers

摘　　要：利用反应离子刻蚀(RIE)技术刻蚀激光器腔面,获得集成式沟槽耦合腔AlGaAs/GaAs激光器,在室温下实现CW稳定单模运转。单模半宽约为0.23nm,边模抑制比达19dB,模间距约2.5nm,单模运转双腔阈值电流为52mA。Monolithic groove-coupled-cavity AlGaAs/GaAs lasers were fabricated by using the technique of reactive ion etched of laser facets. CW stable single mode operation room temperature were observed. Typical single mode (FWHM) is about 0. 23 nm . mode suppression, 19 dB, mode space, 2. 5 nm, and two-cavity threshold current of mode operation, 52mA.

关 键 词：离子刻蚀 半导体激光器 单片集成 

分 类 号：TN248.4[电子电信—物理电子学]