用LPE生长1.35μm InGaAsP/InP量子阱结构的研究  

Study of 1.35μm InGaAsP/InP Quantum Well Structure Grown by LPE

作　　者：邢启江[1] 王舒民[1] 王若鹏[1] 陈娓兮[1] 章蓓[1] 赵沧桑 党小忠 虞丽生 

机构地区：[1]北京大学物理系,北京100871

出　　处：《Journal of Semiconductors》1993年第9期540-544,T001,共6页半导体学报（英文版）

摘　　要：在国内首次利用LPE生长技术在n-InP(100)衬底上成功地生长1.35μm InGaAsP分别限制单量子阱结构。通过对样品的横截面进行的TEM观测,量子阱的阱宽和过渡层的厚度分别为160A和30A。在10K和77K光致发光谱测量中,我们观察到n=1的子能级上电子到重、轻空穴带很强的自由激子跃迁峰,两峰间隔为8.3meV,在低温条件下光致发光谱的半高宽度为20meV。1.35μm InGaAsP/InP separate confinement single quantum well (SQW) structures havebeen successfully grown by liquid-phase epitaxy (LPE) technique for the first time in ourcountry. The SQW structures have been studied by the transmission electron microscopecross-section technique and photoluminescence (PL) at 10K and 77K. The well width andtransition layer thickness are 160A and 30A, respectively.The strong free excitonic peaksassigned to the transition between the n=1 electron quantum level and the n=1 heavy(light-)hole quantum level have been observed in the PL spectrum. The photon energy differencebetween the two photoluminescence peaks is about 8. 3meV, and the full width at halfmaximum of the PL peak at 10K is 20meV.

关 键 词：INGAASP/INP LPE生长 量子阱 结构 

分 类 号：TN304.26[电子电信—物理电子学]