Si/Co/GaAs体系中界面反应的竞争机制  

Competitive Mechanism in Si/Co/GaAs Interfacial Reactions

作　　者：金高龙[1,2] 陈维德[1,2] 许振嘉[1,2] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院国家表面物理实验室,北京100080

出　　处：《Journal of Semiconductors》1993年第11期681-686,T001,共7页半导体学报（英文版）

摘　　要：本文采用AES、XRD和TEM等技术对Si/Co/GaAs三层结构的界面反应作了较详细的研究。结果表明:Si/Co与Co/GaAs两界面的反应具有一定的相似性,即当退火温度低于300℃时,两界面都保持完整;当退火温度高于400℃时,两界面都发生了化学反应,并形成相应的化合相。由于两界面的初始反应条件相近,因而界面反应存在着竞争机制,通过进一步的实验,结果表明;Si/Co界面的反应速度要比Co/GaAs的快,从而为在GaAs衬底上形成CoSi_2/GaAs金半接触提供了有利条件。The interfacial reactions in Si/Co/GaAs sandwich structure have been studied by usingUPS, AES, XRD and TEM techniques.The initial reactions of Co/Si and Co/GaAs interfacesare somewhat similar,namely,the interfaces were still sharp after annealing at 300℃for 30min.However, the chemical reactions happened at both interfaces and the correspondingcompounds were formed rather simultaneously after annealing at 400℃ for 30min.Because of the similarity of interfacial reactions, there is competitive mechanism in Si/Co/GaAs system. After further studies, we know that the interfacial reaction of Si/Co is fasterthan that of Co/GaAs which is very beneficial to form CoSi_2/GaAs Schottky barrier and isalso a base of forming a sharp interface between CoSi_2 and GaAs.

关 键 词：金属半导体 界面 结构 Si/Co/GaAs 

分 类 号：TN304.9[电子电信—物理电子学]