锗离子注入硅单晶的非晶化及二次缺陷的研究  

Study of Amorphization and Secondary Defects in Ge^+ Ions Implanted Si

作　　者：范缇文[1] 张敬平[1] P.L.F.Hemment 

机构地区：[1]中国科学院半导体研究所半导体材料科学实验室,北京100083 [2]英国Surrey大学电子工程系

出　　处：《Journal of Semiconductors》1993年第12期734-737,T001,共5页半导体学报（英文版）

摘　　要：本文用卢瑟福背散射(RBS),横断面透射电子显微镜(XTEM)及微区电子衍射技术研究了锗离子注入硅单晶中的非晶化及二次缺陷的特性。离子注入能量为400keV,剂量范围为1×100^(13)至1×10^(15)/cm^2,离子束流强度为0.046μA/cm^2,注入温度为室温。实验发现,在本工作的离子注入条件下,入射锗离子使硅单晶表面注入层开始非晶化的起始剂量大于0.6×10^(14)/cm^2。形成一个完整匀质表面非晶层所需的临界剂量为1×10^(15)/cm^2。热退火后产生的二次缺陷特性极大地受到退火前样品注入层非晶化程度的影响。Channeling/Rutherford backscattering spectrometry (RBS), cross-sectional transmissionelectron microscopy (XTEM) and microdiffraction have been utilized to study the amorphizationand the characteristics of secondary defects in 400 keV Ge^+ ions implanted Si with dosesranging from 1×10^(13)to 1×10^(15)/cm^2. It is found that under our implantation condition (J=0. 046μA, Ti=RT), the dose for initiation of amorphization in implanted layer is above 0.6×10^(14)/cm^2 and the critical dose required to form a complete surface homogeneous amorphouslayer is about 1×10^(15)/cm^2. The results also reveal that the degree of amorphization of the asimplantedlayers has a significant effect on the characteristics of secondary defects formed afterthermal annealing.

关 键 词：单晶硅 非晶化 缺陷 离子注入 

分 类 号：TN304.12[电子电信—物理电子学]