分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究  

Study on the Structural and Optical Properties of Al_xGa_(1-x)As/GaAs Superlattice Grown by Molecular Beam Epitaxy

作　　者：张允强[1] 高翔[1] 彭正夫 孙娟[1] 蒋树声[2] 章灵军 

机构地区：[1]南京电子器件研究所,210016 [2]南京大学固体微结构实验室,210008 [3]上海红外物理国家实验室,200083

出　　处：《固体电子学研究与进展》1993年第1期30-34,共5页Research & Progress of SSE

摘　　要：报道了分子束外延生长80个周期的Al_xGa_(1-x)As/GaAs超晶格,X射线衍射和透射电镜的结果表明超晶格样品有良好的结构特性,光反射光谱观察到阱内的电子跃迁过程,其结果与理论计算相符。An AlxGa1-xAs/GaAs superlattice with 80 periods was grown by molecular beam epitaxy. Results of X-ray diffraction and TEM indicate that the superlattice sample has good structural property. The electron transition process in quantum well is observed by modulated photo-reflection spectrum and agrees with the theoritical calculation.

关 键 词：分子束外延 超晶格 AIGaAs/GaAs 

分 类 号：TN304.054[电子电信—物理电子学]