高温工作寿命试验技术研究  

A Study of Experimental Technique on Operating-Lifetime at High Temperature

作　　者：娄书礼[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1993年第2期179-181,共3页Research & Progress of SSE

摘　　要：介绍了在高温(150℃以上)工作寿命试验中,采用陶瓷基板厚膜电路、元器件热压键合和高温导电胶粘接以及耐高温的防振荡吸收材料等措施,保证了直至225℃环境温度的试验正常进行。并获得了微波低噪声GaAs FET在室温条件下的平均失效率已低于10^(-9)/h的结果。In this paper,an experiment of operating-lifetime at high temperature (>150℃) has been studied. In this experiment a thick film circuit made on a ce-ramic substrate, devices thermally bonded,wires sticked by high temperature elec-tronic epoxy, and anti-oscillation absorbor were adopted to ensure the tests enviro-mental temperature up to 225℃ range. A mean failure rate of less than 10-9/h for a microwave LN GaAs FET was obtained.

关 键 词：可靠性评价 厚膜电路 导电胶 

分 类 号：TN306[电子电信—物理电子学]