关于SOI/SDB薄膜全耗尽隐埋N沟MOSFET的新型解析模型  

A Novel Analytical Model for Thin Film Fully Depleted Buried N-Channel SOI/SDB MOSFET (SOI/SDB FD BC NMOSFET)

作　　者：周天舒[1] 黄庆安[1] 童勤义 

机构地区：[1]东南大学微电子中心,南京210018

出　　处：《固体电子学研究与进展》1993年第2期117-122,共6页Research & Progress of SSE

摘　　要：对SOI/SDB薄膜全耗尽隐埋N沟MOSFET(FDBC NMOSFET)的器件结构及导电机理进行了深入研究,建立了明确的物理解析模型,推导出各种状态下器件工作电流的解析表达式。并将解析模型的计算结果与实验数据进行了比较和讨论。In this paper, conduction mechanism in thin-film fully depleted buried N-channel SOI/SDB MOSFET is studied in detail, the definite physical model is developed and analytical expressions under various conditions have been provided. Finally, the analytical results based on this model are compared with the experimental results,and some discussions are made.

关 键 词：SOI/SDB 隐埋N沟 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]