几种新型的光电器件  

Novel Optoelectronic Devices

作　　者：张佐兰[1] 

机构地区：[1]东南大学

出　　处：《半导体光电》1994年第1期28-35,共8页Semiconductor Optoelectronics

摘　　要：描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波长红外探测器，以及集成异质结晶体管和激光二极管于一体的高增益、高灵敏的光电子开关器件。文中着重介绍这些器件的结构、制造工艺和器件特性，并对其进行了讨论。This paper describes some newly developed optoelectronic devices such as optical coupling MOS relays made by SOI technology,multiple quantum-well(MQW) longwavelength infrared(LWIR) detectors,and high gain and sensitive photonic swithing devices integrating heterojunction phototransistors with laser diodes.The structures,fabrication technology and characteristics of these devices are presented.

关 键 词：红外探测器 多量子阱 光电器件 

分 类 号：TN15[电子电信—物理电子学]