Si／SiO_2界面态的俘获截面及态密度的能量分布  

Capture Cross Sections and Energy Distribution of Si/SiO_2 Interface States

作　　者：陈开茅[1] 毛晋昌[1] 武兰青[1] 元民华 金泗轩[1] 刘鸿飞[1] 

机构地区：[1]北京大学物理系,北京有色金属研究总院

出　　处：《Journal of Semiconductors》1994年第5期295-303,共9页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文用最近发展起来的准确测量绝缘体与半导体界面态俘获截面的方法［１］，测量了ＭＯＳ结构Ｓｉ／ＳｉＯ２界面态的俘获截面，并利用这些结果将界面态的ＤＬＴＳ谱反演成界面态的能量分布．结果表明：界面态的电子俘获截面强烈地依赖于能量和温度，空穴俘获截面依赖于温度而与能量无明显相关，Ｓｉ／ＳｉＯ２界面态在Ｓｉ禁带下半部的是施主态，而在上半部的是受主态，用ＤＬＴＳ测量的界面态不呈Ｕ型分布，它与准静态Ｃ－Ｖ测量的结果完全不同．Abstract The electron(hole) capture cross sections of the St/SiO2 interface states in MOS structure have been studied with the newly devsloped technique, which has been proved to be capable of providing the most accurate measurement[1]. The energy distribution of the density of the interface states has been calculated by means of the DLTS spectra and the capture cross sections of the interface states. The results show that the electron capture cross section depends strongly upon both energy and temperature, whereas the hole capture cross section is only related to temperature. We suggest that the interface states at the lower and upper of Si energy band gap are donors and accepters, respectively. The DLTS measurements show that the interface states do not have a U-shaped distribution differing from the measurements obtained with quasi static C-V technique.

关 键 词：界面态 硅 二氧化硅 能量分布 

分 类 号：TN307[电子电信—物理电子学]